Jauss, S.A.S.A.JaussSchwaiger, S.S.SchwaigerDaves, W.W.DavesAmbacher, OliverOliverAmbacher2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/39309610.1109/ISPSD.2016.75207832-s2.0-84982151947In this paper we present a new poly-silicon gate process for AlGaN/GaN MIS-HEMT power transistors. Using a complete metal-free front-end processing of the gate module the process is fully CMOS compatible. Additionally, the gate reliability can be significantly increased. We used a three-step LPCVD SiN passivation fully enclosing the gate electrode made of polycrystalline silicon. As gate dielectrics LPCVD deposited SiN are used with a thickness of 20nm and 120nm. We compared these devices with MIS-HEMTs using Al as gate electrode. Constant current measurements have been performed that show with Q(BD,poly,20) nm=714 C/cm2 and a MTTF(0.5A/cm2) =1293s significant higher charge pumping capability through the gate for the poly-Si gated devices compared to conventional metal gates.enGaNHEMTpoly-sigate electrode667conference paper