Active cold load MMICs for Ka-, V-, and W-bands

Kantanen, M.M.KantanenWeissbrodt, E.E.WeissbrodtVaris, J.J.VarisLeuther, ArnulfArnulfLeutherSeelmann-Eggebert, M.M.Seelmann-EggebertRösch, M.M.RöschSchlechtweg, M.M.SchlechtwegPoutanen, T.T.PoutanenSundberg, I.I.SundbergKaisti, M.M.KaistiAltti, M.M.AlttiJukkala, P.P.JukkalaPiironen, P.P.Piironen2022-03-052022-03-052015https://publica.fraunhofer.de/handle/publica/24035110.1049/iet-map.2014.0243Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.en621Active cold load MMICs for Ka-, V-, and W-bandsjournal article