Sutter, D.H.D.H.SutterSchneider, H.H.SchneiderWeisser, S.S.WeisserRalston, J.D.J.D.RalstonLarkins, E.C.E.C.Larkins2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18685610.1063/1.115066The emission transients of optically excited high-speed multiple quantum well laser diodes have been measured by up-converting the emission in a nonlinear crystal. From the gain-switched oscillation the intrinsic resonance frequency and damping factor are determined. The high temporal resolution allows us to observe additional short period oscillations with a frequency of about 170 GHz. Numerical solution of the traveling wave rate equations indicates that these high frequency oscillations arise due to inhomogeneous carrier injection.enInGaAs/GaAslaser diodesLaserdioderelaxation oscillationsRelaxationsoszillationen621667journal article