Stibal, R.R.StibalWickert, M.M.WickertHiesinger, P.P.HiesingerJantz, W.W.Jantz2022-03-032022-03-031999https://publica.fraunhofer.de/handle/publica/19449710.1016/S0921-5107(99)00094-XThe lateral homogeneity of the electrical resistivity p of semi-insulating GaAs substrates is measured with high resolution using contactless capacitive mapping. The improved technique is capable of imaging mesoscopic p fluctuations correlated with the cellular structure of the dislocation density. The results compare favorably with data obtained by point contact topography. A rneasurement and statistical analysis procedure is described that allows an individual evaluation of the macro- and mesocopic contributions to the total on-wafer p variation.encontactless measurementGaAskontaktlose MessungmappingmesoscopemesoskopischRasterungresistivitysemi-insulatingsemiisolierendsubstratetopographyWiderstand621667620journal article