Otto, M.M.OttoKroll, M.M.KrollKäsebier, T.T.KäsebierLi, X.X.LiGesemann, B.B.GesemannFüchsel, K.K.FüchselZiegler, J.J.ZieglerSprafke, A.A.SprafkeWehrspohn, R.B.R.B.Wehrspohn2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38932610.1364/PV.2013.PM1C.3Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by thermal ALD deposited Al2O3.enconference paper