Matthus, C.D.C.D.MatthusBauer, A.J.A.J.BauerFrey, L.L.FreyErlbacher, T.T.Erlbacher2022-03-052022-03-052019https://publica.fraunhofer.de/handle/publica/25519910.1016/j.mssp.2018.10.019In this work, monolithically integrated wavelength-selective 4H-SiC UV-sensor arrays were manufactured using two photolithography masks and only one implantation sequence demonstrating the potential of the advanced 4H-SiC process technology for the first time. The process technology is described in detail for the fabrication of a 2 × 2 wavelength-sensitive UV-sensor array including two variants with different thicknesses of the p-emitter. The maximum spectral responsivity is 92 mA/W for a wavelength of 300 nm and the devices with a thick p-emitter and 162 mA/W for a wavelength of 290 nm and devices with the thin p-emitter. The corresponding values of the external quantum efficiency are 38%, and 69%, respectively. Furthermore, another UV-sensor characteristic is found evaluating the current difference between both types with a maximum spectral responsivity of 80.2 mA/W at a wavelength of 270 nm.enion implantationphotodiodesemiconductor diodesultraviolet deviceexternal quantum efficiencymonolithically integratedphotolithography maskprocess technologySiC PiN diodespectral responsivityUV sensorwavelength-selectivesilicon carbide670537620530journal article