Hafnium titanium silicate high-k dielectric films deposited by MOCVD using novel single source precursors

Zürcher, S.S.ZürcherMorstein, M.M.MorsteinLemberger, M.M.LembergerBauer, A.J.A.J.Bauer2022-03-092022-03-092003https://publica.fraunhofer.de/handle/publica/342490en670620530Hafnium titanium silicate high-k dielectric films deposited by MOCVD using novel single source precursorsconference paper