Zimmermann, H.H.ZimmermannPichler, P.P.Pichler2022-03-082022-03-081989https://publica.fraunhofer.de/handle/publica/316532The diffusion of gold in silicon is described by the kick-out and dissociative mechanism. The resulting set of four coupled partial differential equations is completely solved numerically. Splitting the self-diffusion coefficients, we find that the gold is strongly influenced by the equilibrium concentrations of point-defects. As a result of our work, we can give an upper boundary for the value of the equilibrium concentrations of vacancies and a lower boundary for the diffusivity of vacancies.enGold-Diffusion in Siliconpoint defectsPunktdefektsimulation670620530conference paper