Krause, SebastianSebastianKrause2022-03-062022-03-062020https://publica.fraunhofer.de/handle/publica/266136Doubling the supply voltage of an RF GaN HEMT increases its power per die area and enables a substantial reduction in the size of very-high-power systems.en667539GaN HEMTs. The benefits of far higher voltagesjournal article