Depth profiling of ion-implanted 4H-SiC using confocal Raman spectroscopy

Under CopyrightSong, YingYingSongXu, ZongweiZongweiXuLiu, TaoTaoLiuRommel, MathiasMathiasRommelWang, HongHongWangFang, FengzhouFengzhouFang2022-03-1428.11.20192019https://publica.fraunhofer.de/handle/publica/40569810.24406/publica-fhg-405698en4H-SiCion implantationraman spectroscopy670620530Depth profiling of ion-implanted 4H-SiC using confocal Raman spectroscopyposter