Müller, Harald D.Harald D.MüllerSmith, R.S.R.S.SmithEnnen, H.H.EnnenWagner, J.J.Wagner2022-03-022022-03-021987https://publica.fraunhofer.de/handle/publica/17615410.1063/1.3383532-s2.0-0001553149Using a tunable color center laser, photoluminescence excitation measurements were performed on GaAs:Er grown by molecular-beam epitaxy. These measurements show that only one type of Er(3+)-ion center is responsible for the sharply structured emission band at 1.54 mym. The multiplicity of the zero-phonon lines indicates that this Er(3+)-ion center has lower than cubic symmetry and that the luminescence arises from the intracenter transition 4I13/2-4I15/2 of Er(3+)-ion (4f11). (IAF)en4f-Lumineszenz(infrarot)MolekularstrahlepitaxieNeodymPhotolumineszenzSeltene Erden621667530Photoluminescence excitation measurements on GaAs-Er grown by molecular-beam epitaxyjournal article