Investigations on the plasma-surface interaction during DBD-treatment for low-temperature direct silicon wafer bonding

Michel, B.B.MichelEichler, M.M.EichlerKlages, C.-P.C.-P.Klages2022-03-112022-03-112009https://publica.fraunhofer.de/handle/publica/363953O2 is an innovative activation method for low-temperature direct Si wafer bonding. Plasma-treated SiO2 layers are analyzed by spectroscopic methods (FTIR, XPS, ellipsometry), XRR, AFM and contact angle measurements. Reasons for improved low-temperature bond strengthening after DBD activation are discussed.en667Investigations on the plasma-surface interaction during DBD-treatment for low-temperature direct silicon wafer bondingconference paper