CC BY 4.0Cimbili, Bharath KumarBharath KumarCimbiliFriesicke, ChristianChristianFriesickeRaay, Friedbert vanFriedbert vanRaayWagner, SandrineSandrineWagnerBao, MingquanMingquanBaoQuay, RüdigerRüdigerQuay2023-06-142023-06-142023https://publica.fraunhofer.de/handle/publica/442760https://doi.org/10.24406/publica-145810.1109/LMWT.2023.326852210.24406/publica-1458In this letter, we report two high-power gallium nitride (GaN) power amplifiers (PAs) in the Satcom E -band (71-86 GHz) with an output power of 2.6 and 4 W, designed by incorporating an ultralow-loss on-chip integrated power combiner. The first one is a three-stage four-way combining (unit) PA, and the second one is an eight-way combining balanced PA. The unit PA produces a saturated output power ( PSAT ) of 34.2 dBm (2.6 W), a peak power-added-efficiency (PAE) of 22%, and an associated power gain of 16.2 dB at 74 GHz. This performance was partly made possible by the design and optimization of the low-loss integrated power combiner, which minimized the losses in the matching networks. In addition, the balanced PA produces a P(SAT) of 36 dBm (4 W), P(1 dB) of 35.6 dBm (3.63 W), with an associated PAE of 15.3% at 80 GHz. To the best of the authors’ knowledge, this is the highest output power (4 W) and the highest PAE (22%) for a PA > 2.5 W reported in any of the III-V technologies at E -band.enE-bandgallium nitride (GaN)high efficiencyhigh frequencyhigh output powerlow-lossmm-wavemono lithic microwave integrated circuit (MMIC)ON-chippower amplifier (PA)power combiningW-bandjournal article