Weiss, BeatrixBeatrixWeissReiner, RichardRichardReinerWaltereit, PatrickPatrickWaltereitQuay, RüdigerRüdigerQuayAmbacher, OliverOliverAmbacher2022-03-132022-03-132017https://publica.fraunhofer.de/handle/publica/39995010.1109/WiPDA.2017.81705802-s2.0-85046662974This work presents the operation of a PCB embedded diode-clamped multilevel-converter integrated circuit (IC) fabricated in a lateral, high-voltage AlGaN/GaN-on-Si hetero junction technology. It is demonstrated, that PCB-embedding is an appropriate assembly technique for lateral powerICs with high-integration levels. By placing DC-link capacitors onto the IC-package, parasitc inductances in the power loop can be reduced to the sub-nH range. Considerations regarding common substrate biasing issues in lateral GaN-ICs enable the inverter operation of the 2x3 mm2-ICat input voltages up to 300 V and output power levels of 45W at a switching frequency of 100 kHz.enGaNICmultilevel converterdiode-clampedT-type NPC Invertermonolithic integrationhigh voltagecommon substrateKey Publication667conference paper