Vanselow, F.F.VanselowPoongodan, P.P.PoongodanSakolski, O.O.SakolskiMaurer, L.L.Maurer2022-03-152022-03-152021https://publica.fraunhofer.de/handle/publica/41296010.1109/MOCAST52088.2021.9493344In this paper a new double switch bootstrapping (DSB) scheme for high voltage switched capacitor DC-DC converter is presented. The circuit enables charge pump input voltages greater than the gate-oxide breakdown voltage for the switches. The DSB scheme is implemented in two high-voltage linear charge-pumps for positive and negative output voltages of up 72V and down to -36V, a maximum input voltage of 9V, a load current of 300mA for an efficiency of 34.8% at 2.2 MHz switching frequency. The experimental testchip is realized using a high-voltage 0.18mm SOI technology in 6.54 mm2 .en621conference paper