CC BY-NC-ND 4.0Kumm, J.J.KummChacko, R.V.R.V.ChackoSamadi, H.H.SamadiHartmann, P.P.HartmannEberlein, D.D.EberleinJäger, U.U.JägerWolf, A.A.Wolf2022-03-0525.11.20152015https://publica.fraunhofer.de/handle/publica/24150910.24406/publica-r-24150910.1016/j.egypro.2015.07.052Since passivated emitter and rear cells (PERC) and other silicon solar cell concepts with evaporated aluminum (Al) as rear metallization are incompatible with a common solder process, in this work an annealing stable,solderable and long-term stable metallization scheme deposited by physical vapor deposition (PVD) is developed. The solder stack that complements the Al metallization consists of sputter deposited TiN/Ti/Ag or TiN/NiV/Ag, whereby the TiN layer serves as a diffusion barrier against Al. It is therefore optimized by varying sputter parameters and by stuffing the grain boundaries with oxygen. On the optimized stack a cell-interconnector can be conventionally soldered even after a strong annealing step of 15 min at 425 °C, which sets this concept apart from other PVD metallization approaches. Cell efficiency is not influenced by the solder stack compared to a reference rear metallization by plain evaporated Al. Additionally, long-term stability of the solder-joints on the metallization schemeis investigated by thermal aging of solder-joints and thermal cycling of demo moduleswith PERC cells.enPV Produktionstechnologie und QualitätssicherungSilicium-PhotovoltaikKontaktierung und StrukturierungPilotherstellung von industrienahen SolarzellenModulintegrationmetallizationTiNbarrierSolderingstability670620530journal article