Weber, JulianJulianWeberKlinger, VeraVeraKlingerBrand, Andreas A.Andreas A.BrandGutscher, SimonSimonGutscherWekkeli, AlexanderAlexanderWekkeliMondon, AndrewAndrewMondonOliva, EduardEduardOlivaDimroth, FrankFrankDimroth2022-03-052022-03-052017https://publica.fraunhofer.de/handle/publica/24724410.1109/JPHOTOV.2016.2612358Laser ablation processes provide a potentially low cost and fast technology for microstructuring semiconductors, metals, or dielectrics. This paper deals with picosecond laser ablation (l = 532 nm, t ≈ 9 ps) of III-V semiconductors. In particular, the external threshold fluence of thermal ablation is determined for InP, GaAs, and GaP. Furthermore, the applicability of laser ablation to the electrical separation of III-V solar cells is discussed. In this context, current-voltage characteristics are presented comparing GaInP single-junction solar cells separated by picosecond laser ablation and wet-chemical mesa etching. The laser process leads to a significant drop in open-circuit voltage and fill factor which is explained by a more than three times larger (unpassivated) surface area.enMaterialien - Solarzellen und TechnologiePhotovoltaikIII-V und Konzentrator-PhotovoltaikIII-V Epitaxie und SolarzellenIII-V semiconductorslaser ablation thresholdseparation of III-V solar cellsmesajournal article