Under CopyrightUhnevionak, V.V.UhnevionakBurenkov, A.A.BurenkovPichler, P.P.Pichler2022-03-124.7.20132013https://publica.fraunhofer.de/handle/publica/38026810.1109/PRIME.2013.6603159In this work, a new method for the calculation of Hall factors is described. It is based on the interdependence with mobility components via the respective relaxation (scattering) times. The new method allows an accurate determination of mobility and carrier sheet concentration from Hall-effect measurements and can not only be applied to homogeneously doped substrates but also at the interfaces of electronic devices such as field-effect transistors. To demonstrate the general applicability of the method, we use it to predict the dependence of the Hall factor on dopant concentration in silicon and compare it with measured Hall factors reported in the literature.enhall factorhall measurementsrelaxation (scattering) timemobilitybulk silicon670620530conference paper