Hollinger, R.R.HollingerHarshitha, N.G.N.G.HarshithaKorolev, V.V.KorolevGan, Z.Z.GanGeorge, A.A.GeorgeShumakova, V.V.ShumakovaZürch, M.M.ZürchVogl, T.T.VoglPugzlys, A.A.PugzlysBaltuska, A.A.BaltuskaEilenberger, F.F.EilenbergerSpielmann, C.C.SpielmannTurchanin, A.A.TurchaninKartashov, D.D.Kartashov2022-05-062022-05-062021https://publica.fraunhofer.de/handle/publica/41694310.1364/CLEO_QELS.2021.FTu1L.32-s2.0-851204507302-s2.0-85119399152High harmonic generation (HHG) in a single-atomic-layer non-centrosymmetric semiconductor is investigated experimentally for different driving laser field polarizations. The ellipticity enhanced even-order HHG for certain crystal orientations reveals linked laser and valley polarizations.enharmonic-generationpolarizationsemiconductor laser620Ellipticity controlled high-order harmonic generation in 2D materialsconference paper