Weisser, S.S.WeisserLarkins, E.C.E.C.LarkinsCzotscher, K.K.CzotscherBenz, W.W.BenzDaleiden, J.J.DaleidenEsquivias, I.I.EsquiviasFleissner, J.J.FleissnerRalston, J.D.J.D.RalstonRomero, B.B.RomeroSah, R.E.R.E.SahSchönfelder, A.A.SchönfelderRosenzweig, JosefJosefRosenzweig2022-03-032022-03-031996https://publica.fraunhofer.de/handle/publica/18805910.1109/68.491554We demonstrate record direct modulation bandwidth from MBE-grown In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures. Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6 x 130 micron(exp 2) devices at a bias current of 155 mA, which is the damping limit for this structure. We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of ~1.1 micron for these devices.endiode laserInGaAs/GaAsLaserdiodeMehrfach-Quantenfilmmodulation bandwidthModulationsbandbreitequantum wells621667535journal article