Bollmann, D.D.BollmannBuchner, R.R.BuchnerHaberger, K.K.HabergerNeumayer, G.G.Neumayer2022-03-082022-03-081992https://publica.fraunhofer.de/handle/publica/320218Shallow junctions have been fabricated using an excimer and a COsub2 laser as heating source. The diffusion was made out of a silicate glass layer. The produced diodes were electrically characterized. The concentration profiles measured by SIMS agree with simulations by ICECREM and have a depth in the range of 80 nm to 150 nm.endiffusiondopinglasershallow junctionsilicate glasssub-my-CMOSconference paper