Franke, D.D.FrankeHarde, P.P.HardeWolfram, P.P.WolframGrote, N.N.Grote2022-03-032022-03-031990https://publica.fraunhofer.de/handle/publica/17939510.1016/0022-0248(90)90230-IDoping and diffusion characteristics of Fe in semi-insulating AP-MOVPE grown InP layers were assessed using the SIMS technique. Fairly flat Fe depth profiles and a linear doping curve were obtained at concentrations of up to the lower range of 1017 cm-3. Accumulation of Fe at the substrate/layer interface was found on quite a few samples indicating a gettering effect of the substrate. Very little, if not negligible, diffusion was observed on alternately Fe-doped/undoped structures even after high-temperature heat treatment as long as the Fe content was in the midrange of 1016 cm-3, or lower.endiffusion in solidsdoping profilesgettersheat treatmentiii-v semiconductorsindium compoundsironsecondary ion mass spectrasemiconductor dopingsemiconductor epitaxial layerssemiconductor growthvapour phase epitaxial growthmovpe grown layersdoping behavioursemiconductordiffusion characteristicsap-movpesims techniquedepth profileslinear doping curvegettering effecthigh-temperature heat treatment621548journal article