Arias, J.J.AriasEsquivias, I.I.EsquiviasRalston, J.D.J.D.RalstonLarkins, E.C.E.C.LarkinsWeisser, S.S.WeisserRosenzweig, JosefJosefRosenzweigSchönfelder, A.A.SchönfelderMaier, M.M.Maier2022-03-032022-03-031996https://publica.fraunhofer.de/handle/publica/18800110.1063/1.115738The carrier profile for MBE grown ln(ind 0,35)Ga(ind 0.65)As/GaAs multiquantum well laser structures with nominally undoped and beryllium-doped active regions was determined by using the capacitance- voltage (C-V) technique at room temperature. A simple theoretical model was used to extract the impurity concentration and the quantum-well carrier density from the experimental profiles. We obtained a high carrier concentration in nominally undoped devices caused by a strong growth temperature dependent Be diffusion from the p-cladding layer, and no difference between doped samples with different nominal dopant location.encarrier density profileimpurity concentrationInGaAs/GaAsLadungsträgerdichte-ProfilMBEMehrfach-Quantenfilmquantum wellsStörstellenkonzentration621667journal article