Optimization of critical ion implantation steps in 0.18 mu m CMOS technology

Burenkov, A.A.BurenkovWittl, J.J.WittlSchwalke, U.U.SchwalkeLorenz, J.J.LorenzRyssel, H.H.Ryssel2022-03-092022-03-091998https://publica.fraunhofer.de/handle/publica/330992en670620530Optimization of critical ion implantation steps in 0.18 mu m CMOS technologyconference paper