Residual strain in buried and non-buried semiconductor nanostructures

Lübbert, D.D.LübbertBaumbach, T.T.BaumbachLeprince, L.L.LeprinceSchneck, J.J.SchneckTalneau, A.A.TalneauFelici, R.R.Felici2022-03-032022-03-031998https://publica.fraunhofer.de/handle/publica/193802en620658670Residual strain in buried and non-buried semiconductor nanostructuresbook article