Under CopyrightKlüpfel, Fabian J.Fabian J.KlüpfelPichler, PeterPeterPichler2022-03-1321.11.20172017https://publica.fraunhofer.de/handle/publica/39853410.23919/SISPAD.2017.808526810.24406/publica-r-398534Single electron transistors based on silicon nanopillars were investigated with regard to their current voltage characteristics. The simulations make use of the commercial quantum simulator nextnano++, but extend its functionality for the calculation of tunneling currents. A comparison with results obtained by the Monte-Carlo based tunneling simulator SIMON is presented. Investigations include the variation of geometrical quantities and quantum dot doping.enQuantum Dotsingle electron transistornumerical simulation670620530conference paper