Kim, Y.Y.KimParala, H.H.ParalaBauer, A.J.A.J.BauerLemberger, M.M.LembergerBaunemann, A.A.BaunemannFischer, R.A.R.A.Fischer2022-03-102022-03-102005https://publica.fraunhofer.de/handle/publica/3493502-s2.0-31744444605Hafnium nitride (HfN) films were deposited on Si (100), Si (111), SiO 2/Si (100), and Al2O3 (0001) substrates by metal organic chemical vapor deposition using tetrakis (dimethylamido) hafnium [Hf(NMe2)4] and N,N-dimethylhydrazine (Me 2NNH2) in the temperature range of 600 to 800 °C, The resistivity and morphology of HfN films were strongly dependent on the deposition temperature. Cubic crystalline and conductive HfN film was obtained at 800 °C and exhibited the lowest resistivity of about 1020 ·cm. According to RBS, the HfN film was slightly nitrogen-rich. It was found that both, DMHy as a reaction agent and the high deposition temperature were important factors for the growth of HfN films with promising materials quality.en670620530conference paper