Li, X.X.LiXiao, Y.Y.XiaoBang, J.H.J.H.BangLausch, D.D.LauschMeyer, S.S.MeyerMiclea, P.-T.P.-T.MicleaJung, J.-Y.J.-Y.JungSchweizer, S.L.S.L.SchweizerLee, J.-H.J.-H.LeeWehrspohn, R.B.R.B.Wehrspohn2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23314010.1002/adma.201300973Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a about 35% increase in photocurrent for SiNW based photoelectrochemical cell.en621697620620journal article