A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor

Schmitt, F.F.SchmittSu, L.M.L.M.SuFranke, D.D.FrankeKaumanns, R.R.Kaumanns2022-03-022022-03-021984https://publica.fraunhofer.de/handle/publica/171491Describes an open diffusion technique with a thin vacuum-deposited Zn3P2 layer covered by an Al2O3 layer, Zn diffusion in (100) n-InP single crystals by this techniques was studied and degradation-free surfaces were obtained. The diffusion profiles were measured. With high-temperature diffusion, p+-p--n junctions were obtained; at lower temperature, abrupt p+-n junctions were found. A planar diffused InGaAsP/InP lateral p-n-p transistor was produced using this technique.enbipolar transistorsdiffusion in solidsgallium arsenidegallium compoundsiii-v semiconductorsindium compoundsp-n heterojunctionsvacuum deposited coatingszinc compoundsvacuum deposited filmiii-v semiconductoropen diffusion techniquezn3p2 layeral2o3 layerzn diffusionn-InP single crystalsdiffusion profilesp+-p--n junctionsabrupt p+-n junctionsInGaAsP/InP lateral p-n-p transistor621A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistorjournal article