Ortiz, GuillermoGuillermoOrtizMortet, VincentVincentMortetStrenger, ChristianChristianStrengerUhnevionak, ViktoryiaViktoryiaUhnevionakBurenkov, AlexanderAlexanderBurenkovBauer, A.J.A.J.BauerPichler, PeterPeterPichlerCristiano, FuccioFuccioCristianoBedel-Pereira, ElenaElenaBedel-Pereira2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38556610.4028/www.scientific.net/MSF.806.127In this work, electrical properties of lateral n-channel MOSFETs implanted with different nitrogen doses in the channel region were measured by Hall-effect technique at 300K. A mobility improvement with increasing nitrogen implantation doses is observed. Interface trap density (Dit) was determined from the experimentally measured Hall carrier density. Our results show a high Dit near and within the conduction band that does not change significantly when the nitrogen implantation dose is increased, despite observed mobility improvement.en4H-SiC MOSFETshall mobilityinversion carrier densitydensity of interface traps670620530Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effectEinfluss des Fabrikationsprozesses auf die elektrischen Eigenschaften und die Konzentration von Zuständen an der Grenzschicht in 4H-SiC n-MOSFETs aus Halleffektuntersuchungenconference paper