Cwiklinski, MaciejMaciejCwiklinskiRiedmann, NicoNicoRiedmannZiegler, RobertRobertZieglerVossiek, MartinMartinVossiekBrückner, PeterPeterBrücknerSchwantuschke, DirkDirkSchwantuschkeMikulla, MichaelMichaelMikulla2024-11-142024-11-142024https://publica.fraunhofer.de/handle/publica/478952In this article, we present a gallium nitride (GaN) power amplifier (PA) monolithic microwave integrated circuit (MMIC) and waveguide module that cover the full D-band (110-170 GHz) with a state-of-the-art performance. On-wafer measurements of the balanced ten-stage GaN PA show a small-signal gain of more than 13 dB over the full D-band and a peak output power of 22.6dBm at 160 GHz. A two-way waveguide module delivers more than 18.5dBm of output power over the full D-band with a peak of 25dBm at 120 GHz. To the best of our knowledge, the reported amplifiers show the highest output power within GaN-based circuits beyond 140 GHz. This is also the first demonstration of GaN PAs covering the full D-band.enBroadbandD-band (110-170 GHz)gallium nitride (GaN)high-electron-mobility transistor (HEMT)monolithic microwave integrated circuit (MMIC)power amplifier (PA)waveguide moduleconference paper