Goehlich, AndreasAndreasGoehlichTrieu, Hoc-KhiemHoc-KhiemTrieuVogt, HolgerHolgerVogt2022-03-082022-03-082011https://publica.fraunhofer.de/handle/publica/309528The Hall sensor has a silicon on insulator (SOI) thin film (232) that is formed on a semiconductor substrate (234), such that thickness of semiconductor substrate is larger than thickness of SOI thin film. A sensor region is provided in semiconductor substrate, such that doping concentration of sensor region is higher than doping concentration of semiconductor substrate. A selection circuitry (202) provided in SOI thin film and a vertical Hall sensor element (210) provided at sensor region are electrical connected. An independent claim is included for method for manufacturing Hall sensor.de621patent102011002580