Weisser, S.S.WeisserEsquivias, I.I.EsquiviasRalston, J.D.J.D.RalstonRosenzweig, JosefJosefRosenzweigSchönfelder, A.A.SchönfelderLarkins, E.C.E.C.LarkinsFleissner, J.J.Fleissner2022-03-082022-03-081992https://publica.fraunhofer.de/handle/publica/31986210.1109/IEDM.1992.307493The intrinsic modulation response of semiconductor lasers is dependent on the differential gain, which determines the relaxation frequency for a given current density, and the damping factor, K, which limits the ultimate 3-dB bandwidth. We investigated the dependence of both parameters in GaAs/AlGaAs and pseudomorphic InsubyGasub1minusyAs/GaAs multiple-quantum-well lasers on the threshold gain by measuring the relative intensity noise power spectra of lasers with different facet reflectivities and cavity lengths.endielectric mirror coatingdielektrische SpiegelbeschichtungHalbleiterlaserdiodehigh-frequency direct modulationHochfrequenzdirektmodulationquantum well lasersrelative intensity noiserelatives Intensitätsrauschensemiconductor laser621667conference paper