Hülsmann, A.A.HülsmannKaufel, G.G.KaufelKöhler, KlausKlausKöhlerWagner, J.J.Wagner2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/181908Laterally structured Si Delta-doped GaAs has been investigated by photoluminescence and Raman spectroscopy. Wires were fabricated by electron beam lithography followed by reactive ion mesa etching. Radiative recombination across the Esub0 and Deltasub0 band gap is observed down to the narrowest wire width of 150 nm indicating the presence of an electron gas even in those structures. Collective intersubband plasmon-phonon modes measured by inelastic light scattering exhibit a down-shift in energy which indicates a reduction of the free carrier concentration caused by electron traps in the sidewalls. Spin-density excitation energies, by contrast, which give essentially the energy spacings of the electron subbands formed in the quasi-two- dimensional electron gas associated with the Delta- doping layer, show a slight shift to higher energies possibly due to a rearrangement of the electron subbands caused by the additional lateral confinement.endelta-dopingDelta-DotierungGaAslateral structuringlaterale Strukturierungraman spectroscopyRamanspektroskopie621667541journal article