Neuber, MarkusMarkusNeuberLederer, MaximilianMaximilianLedererMertens, KonstantinKonstantinMertensKämpfe, ThomasThomasKämpfeCzernohorsky, MalteMalteCzernohorskySeidel, KonradKonradSeidel2023-11-072023-11-072022https://publica.fraunhofer.de/handle/publica/45657010.3390/cryst120811152-s2.0-85137412623Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal treatments. Due to its very confined doping concentration range, Si:HfO2 layers based on thermal atomic layer deposition often exhibited a crossflow pattern across 300 mm wafer. Here, plasma enhanced atomic layer deposition is explored as an alternative method for producing Si-doped HfO2 layers, and their ferroelectric and pyroelectric properties are compared.enferroelectrichafnium oxideplasma enhanced atomic layer depositionpyroelectricX-ray diffractionjournal article