Tomanková, KristínaKristínaTomankováMrózek, KryštofKryštofMrózekObrusník, AdamAdamObrusníkFromm, AlexanderAlexanderFrommBurmeister, FrankFrankBurmeister2025-05-122025-05-122025-07https://publica.fraunhofer.de/handle/publica/48752910.1016/j.surfcoat.2025.132126A global plasma model has been developed for a novel HiPIMS deposition process, which integrates both HiPIMS and RF power applied to the target – so-called FastPIMS. The process is utilized for reactive deposition of silicon oxide. Applying HiPIMS and RF power simultaneously helps mitigate the respective limitations of both stand alone processes, such as low deposition rate, disappearing anode or arcing. The model is built upon existing concepts in literature, incorporating modifications tailored to the industrial magnetron of FastPIMS. A comprehensive sensitivity analysis focused on HiPIMS-specific physical phenomena is presented, highlighting the importance of including such physics into the models where applicable. The global model’s predictions are validated against experimental data, showing convincing agreement and confirming the predictive capabilities of the developed simulation.enHiPIMSRFReactive magnetron sputteringGlobal plasma modelSilicon oxideSensitivity analysis600 Technik, Medizin, angewandte Wissenschaften::620 Ingenieurwissenschaftenjournal article