Braunstein, J.J.BraunsteinMikulla, MichaelMichaelMikullaSchmitt, A.A.SchmittKiefer, R.R.KieferWalther, MartinMartinWaltherWeimann, G.G.Weimann2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/332712High-brightness and high-efficiency laser bars have been fabricated in the AlGaAs/InGaAs material system. The electro-optical conversion efficiency is close to 60 % at 60 W optical power for bars with broad area lasers. Laser bars comprising 25 tapered emitters have been fabricated as well. Their total output power is higher than 25 W and the average beam quality factor M2 of each individual emitter is 2.18 at 10 W total power.endiode laserDiodenlaserGaInAsHalbleiterlaserhigh brightnesshigh efficiencyhohe Brillianzhohe Effizienzsemiconductor laser621667conference paper