Richter, ArminArminRichterPatel, HemangiHemangiPatelReichel, ChristianChristianReichelBenick, JanJanBenickGlunz, StefanStefanGlunz2023-08-042023-08-042023https://publica.fraunhofer.de/handle/publica/44656810.1002/admi.2022024692-s2.0-85152886207Al2O3 is one of the most effective dielectric surface passivation layers for silicon solar cells, but recent studies indicate that there is still room for improvement. Instead of a single layer, multilayers of only a few nanometers thickness offer the possibility to tailor material properties on a nanometer scale. In this study, the effect of various plasma treatments performed at different stages during the ALD deposition of Al2O3/SiO2 multilayers on the silicon surface passivation quality is evaluated. Significant improvements in surface passivation quality for some plasma treatments are observed, particularly for single Al2O3/SiO2 bilayers treated with a H2 plasma after SiO2 deposition. This treatment resulted in a surface recombination parameter J0 as low as 0.35 fA cm−2 on (100) surfaces of 10 Ω cm n-type silicon, more than a factor of 5 lower than that of Al2O3 single layers without plasma treatment. Capacitance-voltage measurements indicate that the improved surface passivation of the plasma-treated samples results from an enhanced chemical interface passivation rather than an improved field effect. In addition, a superior temperature stability of the surface passivation quality is found for various plasma-treated multilayers.enaluminum oxideatomic layer depositionplasma treatmentsilicon oxidesilicon surface passivationjournal article