CC BY 4.0Sivverini, GiuseppeGiuseppeSivveriniMeazza, AndreaAndreaMeazzaTraversa, AntonioAntonioTraversaColzani, AlbertoAlbertoColzaniFonte, AlessandroAlessandroFonteMoscato, StefanoStefanoMoscatoOldoni, MatteoMatteoOldoniFriesicke, ChristianChristianFriesicke2024-11-262024-11-262025https://doi.org/10.24406/publica-3818https://publica.fraunhofer.de/handle/publica/47930010.1017/S175907872400065510.24406/publica-3818This manuscript presents a millimeter-wave GaN high-power amplifier (HPA) intended for next generation inter-satellite links (ISLs). The proposed architecture achieves a fractional bandwidth wider than 18% in the V-band spectrum, to deliver a 10 Gbit/s throughput compatible with multi-thousand-km ISLs. Core of the HPA is the monolithic microwave integrated circuits (MMIC ) power amplifier which covers the whole 59-71 GHz band with high efficiency through innovative topologies and a cutting-edge gallium nitride on silicon carbide (GaN-on-SiC) process. The MMIC is then parallelized by means of a 1-to-8 splitter/combiner to obtain a V-band 10 W GaN HPA. Measurement results show a peak small-signal gain of 25.6 dB, 6.5% peak power-added efficiency, and a maximum P (1dB) of 40.3 dBm.en6G mobile communicationcommunicationmicrowave electronicsmicrowave photonicsmillimeter wavephotonicspoint-to-pointradio frequencyTerahertz communicationswireless communicationjournal article