Fuchs, F.F.FuchsPletschen, WilfriedWilfriedPletschenWeimar, U.U.WeimarSchmitz, J.J.SchmitzWalther, MartinMartinWaltherWagner, J.J.WagnerKoidl, P.P.Koidl2022-03-092022-03-091998https://publica.fraunhofer.de/handle/publica/330981We report on the fabrication and characterization of infrared photodiodes based on InAs/(GaIn)Sb superlattices grown on GaSb substrates. A series of devices employing a strain-optimized InAs/(GaIn)Sb superlattice were fabricated. The diodes show a responsivity of 2 A/W and a R0A product between 5 and 15 kohmcm3 at cut-off wavelengths between 7.5 and 8.5 mu m. Under forward bias electrically pumped emission is observed at wavelengths between 8 to 10 mu m up to 240 K.enInAs/(GaIn)Sb Photodiodeinfrared detectorInfrarot-Detektor621667conference paper