Simulation of dry silicon etching in the absence of ion bombardment

Otto, T.T.OttoHofmann, M.M.HofmannWolf, H.H.WolfStreiter, R.R.StreiterSchubert, A.A.SchubertGessner, T.T.Gessner2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/333744en621Simulation of dry silicon etching in the absence of ion bombardmentconference paper