Basler, MichaelMichaelBaslerDöring, PhilippPhilippDöringMönch, StefanStefanMönchReiner, RichardRichardReinerMikulla, MichaelMichaelMikullaQuay, RüdigerRüdigerQuay2023-09-052023-09-052023https://publica.fraunhofer.de/handle/publica/45023210.1109/LED.2023.32906082-s2.0-85163556672In this letter, a vertical GaN power transistor driven by lateral devices fabricated in the same technology is demonstrated. The technology combines a co-integrated large area current aperture vertical electron transistor (CAVET) with high electron mobility transistors (HEMTs) for the realization of the driver on a GaN substrate. The quasi-monolithic integrated driver stage consists of two HEMT devices in a push-pull configuration. The CAVET and HEMTs are characterized, separated, packaged, and measured in a double pulse test setup with inductive load. The voltage signals of the HEMT driver with CAVET are shown in continuous operation up to 5 MHz and extreme duty-cycles. In pulsed operation, switching characteristics and waveforms under load up to 120 V and 4.1 A are shown with turn-on/-off switching times of 17.3/2.8 ns. Finally, this work demonstrates a GaN technology that combines the functional integration of a driver stage with a vertical power transistor and thus opens the pathway to continue lateral GaN power integration in vertical device concepts.encurrent aperature vertical electron transistor (CAVET)gallium nitridepower integrated circuitsdriver circuitsgate drivermonolithic integrated circuitsjournal article