Numerical modeling of highly doped SI:P emitters based on Fermi-Dirac statistics and self-consistent material parameters

Altermatt, Pietro P.Pietro P.AltermattSchumacher, J.O.J.O.SchumacherCuevas, AndrésAndrésCuevasGlunz, Stefan W.Stefan W.GlunzKerr, M.M.KerrKing, R.R.R.R.KingHeiser, G.G.HeiserSchenk, A.A.Schenk2022-03-032022-03-032002https://publica.fraunhofer.de/handle/publica/20258810.1063/1.1501743en621697530Numerical modeling of highly doped SI:P emitters based on Fermi-Dirac statistics and self-consistent material parametersjournal article