Colombeau, B.B.ColombeauSmith, A.J.A.J.SmithCowern, N.E.B.N.E.B.CowernLerch, W.W.LerchPaul, S.S.PaulPawlak, B.J.B.J.PawlakCristiano, F.F.CristianoHebras, X.X.HebrasBolze, D.D.BolzeOrtiz, C.C.OrtizPichler, P.P.Pichler2022-03-102022-03-102004https://publica.fraunhofer.de/handle/publica/345896This work presents breakthrough results on the physics and modeling of deactivation and transient enhanced diffusion of boron in preamorphized (PAI) ultrashallow junctions, and the mechanisms by which fluorine co-implantation controls these processes. The results providea much-needed general physical framework for the evaluation of novel equipment and thermal processes beyond the 50 nm technology node.enboronsilicondiffusionactivationsimulationmodelingfluorine670620530Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant controlElektrische Deaktivierung und Diffusion von Bor in voramorphisierten ultraflachen p/n-Übergängen: Transport von Eigenzwischengitteratomen und die Steuerung über eine Koimplantation von Fluorconference paper