Lim, S.Y.S.Y.LimForster, M.M.ForsterZhang, X.X.ZhangHoltkamp, J.J.HoltkampSchubert, Martin C.Martin C.SchubertCuevas, AndrésAndrésCuevasMacDonald, DanielDanielMacDonald2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23266710.1109/JPHOTOV.2012.22283012-s2.0-84875597512Photoluminescence-based imaging is most commonly used to measure the excess minority carrier density and its corresponding lifetime. By using appropriate surface treatments, this high-resolution imaging technique can also be used for majority carrier concentration determination. The mechanism involves effectively pinning the minority excess carrier density, resulting in a dependence of the photoluminescence intensity on only the majority carrier density. Three suitable surface preparation methods are introduced in this paper: aluminum sputtering, deionized water etching, and mechanical abrasion. Spatially resolved dopant density images determined using this technique are consistent with the images obtained by a well-established technique based on free carrier infrared emission. Three applications of the technique are also presented in this paper, which include imaging of oxygen-related thermal donors, radial dopant density analysis, and the study of donor-related recomb ination active defects. These applications demonstrate the usefulness of the technique in characterizing silicon materials for photovoltaics.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikCharakterisierung von Prozess- und Silicium-MaterialienCharakterisierungZellen und ModuleImagingControl and development of Measuremetn Technology621journal article