Weiss, CharlotteCharlotteWeissSchön, JonasJonasSchönHöhn, OliverOliverHöhnMohr, ChristianChristianMohrKurstjens, RufiRufiKurstjensBoizot, BrunoBrunoBoizotJanz, StefanStefanJanz2022-03-137.9.20182018https://publica.fraunhofer.de/handle/publica/40143610.1109/PVSC.2018.854733410.24406/publica-r-401436For future 4-junction Ge based multi-junction solar cells, the current generated in the Ge sub-cell gets very important. We developed an efficient rear-side passivation stack, which results in minority carrier lifetimes (teff) ≈ 200 ms and investigated its performance in an accelerated aging experiment (1 MeV electron irradiation). The aging caused a strong lifetime decrease down to teff = 4 ms, whereas the carrier mobility stayed constant. These experimental values provide the basis for Beginning-of-Life and End-of-Life solar cell simulations, which show that the potential of the rear-side passivation for 3-junction solar-cell performance is limited, but very promising for 4-junction solar cells.enIII-V solar cellpassivationgermaniumlifetime measurementsolar cell simulationspace solar cellelectron irradiationPhotovoltaikIII-V und Konzentrator-PhotovoltaikIII-V Epitaxie und Solarzellensolar cellsmeasurementcell simulation621697Potential analysis of a rear-side passivation for multi-junction space solar cells based on germanium substratesconference paper