Basler, MichaelMichaelBaslerMönch, StefanStefanMönchReiner, RichardRichardReinerBenkhelifa, FouadFouadBenkhelifaQuay, RüdigerRüdigerQuayAmbacher, OliverOliverAmbacherWeidinger, GeraldGeraldWeidingerWeis, GeraldGeraldWeisKallfass, IngmarIngmarKallfass2022-03-142022-03-142021https://publica.fraunhofer.de/handle/publica/411847This work develops high-power density DC-DC converters by combining monolithically integrated low voltage half-bridge GaN ICs with two advanced packaging approaches. An in-house fabricated monolithically integrated half-bridge with application-specific gate width ratio is investigated. The half-bridge GaN ICs are assembled and compared using both PCB-embedding and flip-chip assemblies. Finally, DC-DC converters with a max. power of 30 W and power density of >1000 W/in3 are realized by combing these GaN Power ICs and advanced packaging technologies.en667conference paper