Braunstein, J.J.BraunsteinSchlechtweg, M.M.SchlechtwegTasker, P.J.P.J.TaskerReinert, W.W.ReinertHülsmann, A.A.HülsmannKöhler, KlausKlausKöhlerBronner, WolfgangWolfgangBronnerBosch, R.R.BoschHaydl, W.W.Haydl2022-03-082022-03-081993https://publica.fraunhofer.de/handle/publica/32106010.1109/GAAS.1993.3944522-s2.0-0027882882Several millimeter-wave MMICs were fabricated successfully using 0.16 mym pseudomorphic MODFET technology. A 5-stage distributed amplifier has 9.3 dB gain over the frequency range 5 GHz to 80 GHz and a noise figure less than 4.3 dB up to 60 GHz. A narrow band 3-stage low noise amplifier delivers more than 21 dB gain between 70 and 80 GHz. For the first time Cascode transistors in CPW-technology were used for a distributed amplifier achieving a gain bandwidth product of 744 GHz star dB.enCPW-technologykoplanarer Wellenleiterlow-noise amplifierMODFETrauscharmer Verstärker621667conference paper