Sahoo, R.R.SahooWollmann, L.L.WollmannSelle, S.S.SelleHöche, T.T.HöcheErnst, B.B.ErnstKalache, A.A.KalacheShekhar, C.C.ShekharKumar, N.N.KumarChadov, S.S.ChadovFelser, C.C.FelserParkin, S.S.P.S.S.P.ParkinNayak, A.K.A.K.Nayak2022-03-052022-03-052016https://publica.fraunhofer.de/handle/publica/24585310.1002/adma.2016029632-s2.0-849828934982-s2.0-84990251929Fully compensated ferrimagnets with tetragonal crystal structure have the potential for large spin-polarization and strong out-of-plane magnetic anisotropy; hence, they are ideal candidates for high-density-memory applications. Tetragonal Heusler thin films with compensated magnetic state are realized by substitution of Pt in Mn3−xPtxGa. Furthermore, the bilayer formed from compensated/uncompensated Mn-Pt-Ga layers is utilized to accomplish exchange bias up to room temperature.en620Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronicsjournal article