Lorenz, J.J.LorenzPelka, J.J.PelkaRyssel, H.H.Ryssel2022-03-022022-03-021989https://publica.fraunhofer.de/handle/publica/177737During the last few years, process simulation has become a valuable tool for the optimization of semiconductor fabrication technologies. In this paper, some models, measurement methods and algorithms for ion implantation, diffusion and oxidation are discussed.dediffusiondiffusion oxidationdopant profileDotierungsprofilHalbleitertechnologieimplantationion implantationmeasurement techniqueMeßverfahrenoxidationprocess simulationProzeßsimulationsemiconductor technology670620530journal article